BCR166WE6327 ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - BCR166WE6327 - BCR166 - DIGITAL TRANSISTOR
tariffCode: 85412100
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
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Technische Details BCR166WE6327 ROCHESTER ELECTRONICS
Description: BIPOLAR DIGITAL TRANSISTOR, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 160 MHz, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: PG-SOT323-3-1, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Bulk.
Weitere Produktangebote BCR166WE6327
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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BCR166WE6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTOR Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 160 MHz Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: PG-SOT323-3-1 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BCR166WE6327 |
|
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 160 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Description: BIPOLAR DIGITAL TRANSISTOR
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 160 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH