BCR169SH6327 Infineon Technologies


Infineon-BCR169SERIES-DS-v01_01-en[1].pdf?fileId=db3a30431428a37301144063498902f9
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BCR169SH6327 Infineon Technologies

Description: BIPOLAR DIGITAL TRANSISTOR, Part Status: Active, Supplier Device Package: PG-SOT363-6-1, Resistor - Base (R1): 4.7kOhms, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 250mW, Transistor Type: 2 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-VSSOP, SC-88, SOT-363, Packaging: Bulk.