
BCR185E6327 INFINEON TECHNOLOGIES

Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.2W
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4850 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
913+ | 0.08 EUR |
1017+ | 0.07 EUR |
1150+ | 0.06 EUR |
1327+ | 0.05 EUR |
1401+ | 0.05 EUR |
3000+ | 0.05 EUR |
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Produktbewertung abgeben
Technische Details BCR185E6327 INFINEON TECHNOLOGIES
Description: BIPOLAR DIGITAL TRANSISTOR, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Supplier Device Package: PG-SOT23-3-1, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote BCR185E6327 nach Preis ab 0.05 EUR bis 0.45 EUR
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BCR185E6327 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT23 Mounting: SMD Base resistor: 10kΩ Base-emitter resistor: 47kΩ Power dissipation: 0.2W Frequency: 200MHz |
auf Bestellung 4850 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR 185 E6327 | Hersteller : Infineon Technologies |
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auf Bestellung 100668 Stücke: Lieferzeit 10-14 Tag (e) |
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BCR185E-6327 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR185E6327 | Hersteller : Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |