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BCR35PNE6433HTMA1 Infineon Technologies


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Hersteller: Infineon Technologies
Description: TRANS NPN/PNP PREBIAS SOT363
Part Status: Obsolete
Supplier Device Package: PG-SOT363-PO
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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Technische Details BCR35PNE6433HTMA1 Infineon Technologies

Description: TRANS NPN/PNP PREBIAS SOT363, Part Status: Obsolete, Supplier Device Package: PG-SOT363-PO, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 10kOhms, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 250mW, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-VSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).