BCR35PNH6327 INFINEON TECHNOLOGIES


BCR35PNH6327.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 150MHz
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
200+0.43 EUR
435+0.19 EUR
Mindestbestellmenge: 200 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BCR35PNH6327 INFINEON TECHNOLOGIES

Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Frequency - Transition: 150MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: PG-SOT363-6, Part Status: Active.

Weitere Produktangebote BCR35PNH6327 nach Preis ab 0.14 EUR bis 1 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
BCR 35PN H6327 Infineon Technologies INFNS19243-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
4116+0.14 EUR
Mindestbestellmenge: 4116 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR 35PN H6327 Infineon Technologies Infineon-BCR35PN-DS-v01_01-en-514497.pdf Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR
auf Bestellung 9088 Stücke:
Lieferzeit 10-14 Tag (e)
4+1 EUR
10+0.76 EUR
100+0.48 EUR
500+0.32 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR 35PN H6327 INFNS19243-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4116+0.14 EUR
Mindestbestellmenge: 4116 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR 35PN H6327 Infineon-BCR35PN-DS-v01_01-en-514497.pdf
Hersteller: Infineon Technologies
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR
auf Bestellung 9088 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+1 EUR
10+0.76 EUR
100+0.48 EUR
500+0.32 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH