BCR35PNH6327

BCR35PNH6327 INFINEON TECHNOLOGIES


pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C6B81F686DE469&compId=BCR35PNH6327.pdf?ci_sign=d3b4d6d323b746cd2a87e679255d63f2a25347e6 Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN / PNP
Anzahl je Verpackung: 5 Stücke
auf Bestellung 460 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
185+0.39 EUR
460+0.16 EUR
3000+0.1 EUR
Mindestbestellmenge: 185
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BCR35PNH6327 INFINEON TECHNOLOGIES

Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Frequency - Transition: 150MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: PG-SOT363-6, Part Status: Active.

Weitere Produktangebote BCR35PNH6327 nach Preis ab 0.12 EUR bis 0.84 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
BCR35PNH6327 BCR35PNH6327 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C6B81F686DE469&compId=BCR35PNH6327.pdf?ci_sign=d3b4d6d323b746cd2a87e679255d63f2a25347e6 Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 150MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Type of transistor: NPN / PNP
auf Bestellung 460 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
185+0.39 EUR
460+0.16 EUR
Mindestbestellmenge: 185
Im Einkaufswagen  Stück im Wert von  UAH
BCR 35PN H6327 Hersteller : Infineon Technologies INFNS19243-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4116+0.12 EUR
Mindestbestellmenge: 4116
Im Einkaufswagen  Stück im Wert von  UAH
BCR 35PN H6327 Hersteller : Infineon Technologies Infineon-BCR35PN-DS-v01_01-en-514497.pdf Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR
auf Bestellung 9088 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.84 EUR
10+0.64 EUR
100+0.4 EUR
500+0.27 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH