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BCR35PNH6433XTMA1

BCR35PNH6433XTMA1 Infineon Technologies


bcr35pn.pdf Hersteller: Infineon Technologies
Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-363 T/R
auf Bestellung 40000 Stücke:

Lieferzeit 14-21 Tag (e)
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Technische Details BCR35PNH6433XTMA1 Infineon Technologies

Description: TRANS NPN/PNP PREBIAS SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Frequency - Transition: 150MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: PG-SOT363-PO, Part Status: Last Time Buy.

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BCR35PNH6433XTMA1 Hersteller : Infineon bcr35pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406b0def02ff
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
BCR35PNH6433XTMA1 Hersteller : INFINEON TECHNOLOGIES bcr35pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406b0def02ff Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT363
Polarisation: bipolar
Collector current: 0.1A
Collector-emitter voltage: 50V
Frequency: 150MHz
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Type of transistor: NPN / PNP
Base-emitter resistor: 47kΩ
Power dissipation: 0.25W
Anzahl je Verpackung: 1 Stücke
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BCR35PNH6433XTMA1 BCR35PNH6433XTMA1 Hersteller : Infineon Technologies bcr35pn.pdf Trans Digital BJT NPN/PNP 50V 100mA Automotive 6-Pin SOT-363 T/R
Produkt ist nicht verfügbar
BCR35PNH6433XTMA1 BCR35PNH6433XTMA1 Hersteller : Infineon Technologies bcr35pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406b0def02ff Description: TRANS NPN/PNP PREBIAS SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Last Time Buy
Produkt ist nicht verfügbar
BCR35PNH6433XTMA1 Hersteller : INFINEON TECHNOLOGIES bcr35pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406b0def02ff Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Mounting: SMD
Case: SOT363
Polarisation: bipolar
Collector current: 0.1A
Collector-emitter voltage: 50V
Frequency: 150MHz
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Type of transistor: NPN / PNP
Base-emitter resistor: 47kΩ
Power dissipation: 0.25W
Produkt ist nicht verfügbar