Produkte > INFINEON TECHNOLOGIES > BCR48PNE6327BTSA1

BCR48PNE6327BTSA1 Infineon Technologies


bcr48pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406c1ce60300
Hersteller: Infineon Technologies
Description: TRANS NPN/PNP PREBIAS SOT363
Supplier Device Package: PG-SOT363-PO
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms, 2.2kOhms
Frequency - Transition: 100MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 70mA, 100mA
Power - Max: 250mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BCR48PNE6327BTSA1 Infineon Technologies

Description: TRANS NPN/PNP PREBIAS SOT363, Supplier Device Package: PG-SOT363-PO, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 47kOhms, 2.2kOhms, Frequency - Transition: 100MHz, 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 70mA, 100mA, Power - Max: 250mW, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-VSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).