BCR521E6327HTSA1 Infineon Technologies
Hersteller: Infineon TechnologiesTrans Digital BJT NPN 50V 500mA 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R
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Technische Details BCR521E6327HTSA1 Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V, Supplier Device Package: PG-SOT23, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 330 mW, Frequency - Transition: 100 MHz, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms.
Weitere Produktangebote BCR521E6327HTSA1
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BCR521E6327HTSA1 | Hersteller : Infineon Technologies |
Trans Digital BJT NPN 50V 500mA 330mW Automotive 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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BCR521E6327HTSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ Mounting: SMD Power dissipation: 0.33W Polarisation: bipolar Collector-emitter voltage: 50V Frequency: 100MHz Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 1kΩ Type of transistor: NPN Case: SOT23 Collector current: 0.5A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BCR521E6327HTSA1 | Hersteller : Infineon Technologies |
Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 100 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
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BCR521E6327HTSA1 | Hersteller : Infineon Technologies |
Description: TRANS PREBIAS NPN 50V SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 100 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
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BCR521E6327HTSA1 | Hersteller : Infineon Technologies |
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR |
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BCR521E6327HTSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ Mounting: SMD Power dissipation: 0.33W Polarisation: bipolar Collector-emitter voltage: 50V Frequency: 100MHz Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 1kΩ Type of transistor: NPN Case: SOT23 Collector current: 0.5A |
Produkt ist nicht verfügbar |