
BCR521E6327HTSA1 Infineon Technologies

Trans Digital BJT NPN 50V 500mA 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
3000+ | 0.11 EUR |
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Technische Details BCR521E6327HTSA1 Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V, Supplier Device Package: PG-SOT23, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 330 mW, Frequency - Transition: 100 MHz, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms.
Weitere Produktangebote BCR521E6327HTSA1 nach Preis ab 0.12 EUR bis 0.12 EUR
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BCR521E6327HTSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR521E6327HTSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR521E6327HTSA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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BCR521E6327HTSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Base resistor: 1kΩ Base-emitter resistor: 1kΩ Frequency: 100MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BCR521E6327HTSA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 100 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
Produkt ist nicht verfügbar |
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BCR521E6327HTSA1 | Hersteller : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 100 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
Produkt ist nicht verfügbar |
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BCR521E6327HTSA1 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |
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BCR521E6327HTSA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Base resistor: 1kΩ Base-emitter resistor: 1kΩ Frequency: 100MHz |
Produkt ist nicht verfügbar |