Produkte > INFINEON TECHNOLOGIES > BCR521E6327HTSA1
BCR521E6327HTSA1

BCR521E6327HTSA1 Infineon Technologies

bcr521.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407b78610308
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Resistors Included: R1 and R2
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 1 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 100 MHz
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: PG-SOT23
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 18000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BCR521E6327HTSA1 Infineon Technologies

Description: TRANS PREBIAS NPN 50V SOT23, Resistors Included: R1 and R2, Packaging: Tape & Reel (TR), Resistor - Emitter Base (R2): 1 kOhms, Resistor - Base (R1): 1 kOhms, Frequency - Transition: 100 MHz, Power - Max: 330 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: PG-SOT23, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3.

Weitere Produktangebote BCR521E6327HTSA1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BCR521E6327HTSA1 BCR521E6327HTSA1 Infineon Technologies bcr521.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407b78610308 Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR521E6327HTSA1 BCR521E6327HTSA1 Infineon Technologies Infineon_BCR521_DS_v01_01_en-1731213.pdf Digital Transistors NPN Silicon Digital TRANSISTOR
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR521E6327HTSA1 bcr521.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407b78610308
BCR521E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR521E6327HTSA1 Infineon_BCR521_DS_v01_01_en-1731213.pdf
BCR521E6327HTSA1
Hersteller: Infineon Technologies
Digital Transistors NPN Silicon Digital TRANSISTOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH