BCW60FE6327 Infineon Technologies
![Infineon-BCW60_BCX70-DS-v01_01-en[1].pdf?fileId=db3a30432f91014f012fb516e6041665](/images/adobe-acrobat.png)
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-1
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produktrezensionen
Produktbewertung abgeben
Technische Details BCW60FE6327 Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Power - Max: 330 mW, Voltage - Collector Emitter Breakdown (Max): 32 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: PG-SOT23-3-1, Frequency - Transition: 250MHz, Current - Collector Cutoff (Max): 20nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk.