BCW65CLT1G onsemi
Hersteller: onsemi
Description: TRANS NPN 32V 0.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 225 mW
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.073 EUR |
| 6000+ | 0.065 EUR |
| 9000+ | 0.061 EUR |
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Technische Details BCW65CLT1G onsemi
Description: TRANS NPN 32V 0.8A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 20nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 32 V, Power - Max: 225 mW.
Weitere Produktangebote BCW65CLT1G nach Preis ab 0.067 EUR bis 0.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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BCW65CLT1G | onsemi |
Bipolar Transistors - BJT 100mA 60V NPN |
auf Bestellung 19413 Stücke: Lieferzeit 10-14 Tag (e) |
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BCW65CLT1G | onsemi |
Description: TRANS NPN 32V 0.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 225 mW |
auf Bestellung 14036 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BCW65CLT1G |
|
Hersteller: onsemi
Bipolar Transistors - BJT 100mA 60V NPN
Bipolar Transistors - BJT 100mA 60V NPN
auf Bestellung 19413 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 0.35 EUR |
| 17+ | 0.2 EUR |
| 100+ | 0.13 EUR |
| 500+ | 0.096 EUR |
| 1000+ | 0.083 EUR |
| 3000+ | 0.067 EUR |
| BCW65CLT1G |
|
Hersteller: onsemi
Description: TRANS NPN 32V 0.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 225 mW
Description: TRANS NPN 32V 0.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 225 mW
auf Bestellung 14036 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 56+ | 0.38 EUR |
| 94+ | 0.23 EUR |
| 152+ | 0.14 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.089 EUR |