BCW67BE6327 Infineon Technologies

Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Power - Max: 330 mW, Voltage - Collector Emitter Breakdown (Max): 32 V, Current - Collector (Ic) (Max): 800 mA, Part Status: Active, Supplier Device Package: PG-SOT23-3-1, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V, Current - Collector Cutoff (Max): 20nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk.