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BCY58-VIII PBFREE

BCY58-VIII PBFREE Central Semiconductor


Hersteller: Central Semiconductor
Bipolar Transistors - BJT NPN 32Vcbo 7.0Vebo 100mA 340mW 1W
auf Bestellung 1833 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+3.52 EUR
10+2.9 EUR
100+2.32 EUR
250+2.15 EUR
500+1.94 EUR
1000+1.66 EUR
2000+1.58 EUR
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Technische Details BCY58-VIII PBFREE Central Semiconductor

Description: 32V 100MA 340MW TH TRANSISTOR-SM, Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-206AA, TO-18-3 Metal Can, Packaging: Box, Supplier Device Package: TO-18, Power - Max: 340 mW, Voltage - Collector Emitter Breakdown (Max): 32 V, Current - Collector (Ic) (Max): 100 mA, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V, Current - Collector Cutoff (Max): 10nA (ICBO).

Weitere Produktangebote BCY58-VIII PBFREE

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BCY58-VIII PBFREE BCY58-VIII PBFREE Central Semiconductor Corp Description: 32V 100MA 340MW TH TRANSISTOR-SM
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Box
Supplier Device Package: TO-18
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCY58-VIII PBFREE
BCY58-VIII PBFREE
Hersteller: Central Semiconductor Corp
Description: 32V 100MA 340MW TH TRANSISTOR-SM
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Box
Supplier Device Package: TO-18
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH