BD435S ON Semiconductor / Fairchild
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)
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Technische Details BD435S ON Semiconductor / Fairchild
Description: TRANS NPN 32V 4A TO126-3, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V, Frequency - Transition: 3MHz, Supplier Device Package: TO-126-3, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 32 V, Power - Max: 36 W.
Weitere Produktangebote BD435S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| BD435S | Hersteller : ONSEMI |
 Description: ONSEMI - BD435S - BD435S, SINGLE BIPOLAR TRANSISTORStariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BD435S | Hersteller : ON Semiconductor |
Trans GP BJT NPN 32V 4A 36000mW 3-Pin(3+Tab) TO-126 Bag |
Produkt ist nicht verfügbar |
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BD435S | Hersteller : onsemi |
Description: TRANS NPN 32V 4A TO126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V Frequency - Transition: 3MHz Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 36 W |
Produkt ist nicht verfügbar |