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BD435S

BD435S ON Semiconductor / Fairchild

BD435-1305177.pdf
Hersteller: ON Semiconductor / Fairchild
Bipolar Transistors - BJT NPN Epitaxial Sil
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Technische Details BD435S ON Semiconductor / Fairchild

Description: TRANS NPN 32V 4A TO-126-3, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V, Frequency - Transition: 3MHz, Supplier Device Package: TO-126-3, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 32 V, Power - Max: 36 W.

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BD435S BD435S onsemi BD433%2C435%2C437.pdf Description: TRANS NPN 32V 4A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 36 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BD435S BD433%2C435%2C437.pdf
BD435S
Hersteller: onsemi
Description: TRANS NPN 32V 4A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 36 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH