BD435STU

BD435STU ON Semiconductor / Fairchild


BD435-1305177.pdf Hersteller: ON Semiconductor / Fairchild
Bipolar Transistors - BJT NPN Epitaxial Sil
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Technische Details BD435STU ON Semiconductor / Fairchild

Description: TRANS NPN 32V 4A TO126-3, Packaging: Tube, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V, Frequency - Transition: 3MHz, Supplier Device Package: TO-126-3, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 32 V, Power - Max: 36 W.

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BD435STU BD435STU Hersteller : ON Semiconductor 3672202892277385bd435.pdf Trans GP BJT NPN 32V 4A 36000mW 3-Pin(3+Tab) TO-126 Tube
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BD435STU BD435STU Hersteller : onsemi BD433%2C435%2C437.pdf Description: TRANS NPN 32V 4A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 36 W
Produkt ist nicht verfügbar