BD436G onsemi
Hersteller: onsemiDescription: POWER BIPOLAR TRANSISTOR, PNP
Packaging: Bulk
Part Status: Active
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-225-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 36 W
auf Bestellung 19200 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 888+ | 0.83 EUR |
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Technische Details BD436G onsemi
Description: POWER BIPOLAR TRANSISTOR, PNP, Packaging: Bulk, Part Status: Active, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 1V, Frequency - Transition: 3MHz, Supplier Device Package: TO-225-3, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 32 V, Power - Max: 36 W.
Weitere Produktangebote BD436G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| BD436G | Hersteller : ONSEMI |
Description: ONSEMI - BD436G - BD436G, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 19200 Stücke: Lieferzeit 14-21 Tag (e) |
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| BD436G | Hersteller : onsemi |
Bipolar Transistors - BJT PNP Bipolar Power Transistor |
Produkt ist nicht verfügbar |