Technische Details BD809
Description: TRANS NPN 80V 10A TO220, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.1V @ 300mA, 3A, Current - Collector Cutoff (Max): 1mA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 2V, Frequency - Transition: 1.5MHz, Supplier Device Package: TO-220, Part Status: Active, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 90 W.
Weitere Produktangebote BD809
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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BD809 | Hersteller : ONSEMI |
Description: ONSEMI - BD809 - TRANS NPN 80V 10A TO-220AB tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1038 Stücke: Lieferzeit 14-21 Tag (e) |
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BD809 | Hersteller : onsemi |
Description: TRANS NPN 80V 10A TO220 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.1V @ 300mA, 3A Current - Collector Cutoff (Max): 1mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 2V Frequency - Transition: 1.5MHz Supplier Device Package: TO-220 Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 90 W |
Produkt ist nicht verfügbar |
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BD809 | Hersteller : onsemi | Bipolar Transistors - BJT 10A 80V 90W NPN |
Produkt ist nicht verfügbar |