BD809G

Hersteller: On Semiconductor
TO220 Транзистори

Hersteller: onsemi
Description: TRANS NPN 80V 10A TO-220
Supplier Device Package: TO-220
Frequency - Transition: 1.5MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 2V
Current - Collector Cutoff (Max): 1mA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 90 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 10 A

Hersteller: onsemi
Bipolar Transistors - BJT 10A 80V 90W NPN