BF888H6327 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: RF TRANSISTOR, NPN
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4V
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 25A, 3V
Frequency - Transition: 47GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1553+ | 0.33 EUR |
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Technische Details BF888H6327 Infineon Technologies
Description: RF TRANSISTOR, NPN, Packaging: Bulk, Package / Case: SC-82A, SOT-343, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 27dB, Power - Max: 160mW, Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 4V, DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 25A, 3V, Frequency - Transition: 47GHz, Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz, Supplier Device Package: PG-SOT343-4-2, Part Status: Active.
Weitere Produktangebote BF888H6327
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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BF 888 H6327 | Hersteller : Infineon Technologies | RF Bipolar Transistors RF BIP TRANSISTOR |
Produkt ist nicht verfügbar |