BF821/DG/B2215 NXP USA Inc.
Hersteller: NXP USA Inc.Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 250 mW
Qualification: AEC-Q101
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Technische Details BF821/DG/B2215 NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 30mA, Current - Collector Cutoff (Max): 10nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V, Frequency - Transition: 60MHz, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 250 mW, Qualification: AEC-Q101.