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BFL4001

BFL4001 onsemi


BFL4001_Rev_Mar_2010.pdf Hersteller: onsemi
Description: MOSFET N-CH 900V 4.1A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 3.25A, 10V
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Supplier Device Package: TO-220FI(LS)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 30 V
auf Bestellung 5700 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
85+5.99 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BFL4001 onsemi

Description: MOSFET N-CH 900V 4.1A TO220FI, Packaging: Bag, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), Rds On (Max) @ Id, Vgs: 2.7Ohm @ 3.25A, 10V, Power Dissipation (Max): 2W (Ta), 37W (Tc), Supplier Device Package: TO-220FI(LS), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 30 V.

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BFL4001 Hersteller : ONSEMI SSCLS00949-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - BFL4001 - BFL4001, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 9780 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BFL4001 BFL4001 Hersteller : onsemi BFL4001_Rev_Mar_2010.pdf Description: MOSFET N-CH 900V 4.1A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 3.25A, 10V
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Supplier Device Package: TO-220FI(LS)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 30 V
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Im Einkaufswagen  Stück im Wert von  UAH