BFN 26 E6327 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 3+ | 1.12 EUR |
| 10+ | 0.77 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.23 EUR |
| 3000+ | 0.19 EUR |
| 6000+ | 0.17 EUR |
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Technische Details BFN 26 E6327 Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Power - Max: 360 mW, Voltage - Collector Emitter Breakdown (Max): 300 V, Current - Collector (Ic) (Max): 200 mA, Part Status: Active, Supplier Device Package: PG-SOT23-3-3, Frequency - Transition: 70MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk.
Weitere Produktangebote BFN 26 E6327
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
BFN26E6327 | Infineon Technologies |
 Description: SMALL SIGNAL BIPOLAR TRANSISTORPower - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 200 mA Part Status: Active Supplier Device Package: PG-SOT23-3-3 Frequency - Transition: 70MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BFN26E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.2A Power dissipation: 0.36W Case: SOT23 Mounting: SMD Frequency: 70MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BFN26E6327 |
|
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-3
Frequency - Transition: 70MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-3
Frequency - Transition: 70MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BFN26E6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH