BFN 26 E6327 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 3+ | 1.12 EUR |
| 10+ | 0.77 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.23 EUR |
| 3000+ | 0.19 EUR |
| 6000+ | 0.17 EUR |
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Technische Details BFN 26 E6327 Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V, Frequency - Transition: 70MHz, Supplier Device Package: PG-SOT23-3-3, Part Status: Active, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 360 mW.
Weitere Produktangebote BFN 26 E6327
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| BFN 26 E6327 | Hersteller : Infineon | Код виробника: BFN26E6327 TRANS NPN 300V 0.2A SOT-23 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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BFN26E6327 | Hersteller : Infineon Technologies |
 Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V Frequency - Transition: 70MHz Supplier Device Package: PG-SOT23-3-3 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 360 mW |
Produkt ist nicht verfügbar |
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BFN26E6327 | Hersteller : INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.2A Power dissipation: 0.36W Case: SOT23 Mounting: SMD Frequency: 70MHz |
Produkt ist nicht verfügbar |