BFP 420F H6327 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 3+ | 1.08 EUR |
| 10+ | 0.66 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.3 EUR |
| 3000+ | 0.25 EUR |
| 6000+ | 0.23 EUR |
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Technische Details BFP 420F H6327 Infineon Technologies
Description: RF TRANSISTOR, X BAND, NPN, Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 4-SMD, Flat Leads, Packaging: Bulk, Part Status: Active, Supplier Device Package: 4-TSFP, Noise Figure (dB Typ @ f): 0.9dB ~ 2.2dB @ 150MHz ~ 5.5GHz, Frequency - Transition: 25GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V, Voltage - Collector Emitter Breakdown (Max): 4.5V, Current - Collector (Ic) (Max): 60mA, Power - Max: 210mW, Gain: 37dB, Operating Temperature: 150°C (TJ).
Weitere Produktangebote BFP 420F H6327
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| BFP420FH6327 | Infineon Technologies |
 Description: RF TRANSISTOR, X BAND, NPNTransistor Type: NPN Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Packaging: Bulk Part Status: Active Supplier Device Package: 4-TSFP Noise Figure (dB Typ @ f): 0.9dB ~ 2.2dB @ 150MHz ~ 5.5GHz Frequency - Transition: 25GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V Voltage - Collector Emitter Breakdown (Max): 4.5V Current - Collector (Ic) (Max): 60mA Power - Max: 210mW Gain: 37dB Operating Temperature: 150°C (TJ) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BFP420FH6327 |
|
Hersteller: Infineon Technologies
Description: RF TRANSISTOR, X BAND, NPN
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Bulk
Part Status: Active
Supplier Device Package: 4-TSFP
Noise Figure (dB Typ @ f): 0.9dB ~ 2.2dB @ 150MHz ~ 5.5GHz
Frequency - Transition: 25GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 60mA
Power - Max: 210mW
Gain: 37dB
Operating Temperature: 150°C (TJ)
Description: RF TRANSISTOR, X BAND, NPN
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Bulk
Part Status: Active
Supplier Device Package: 4-TSFP
Noise Figure (dB Typ @ f): 0.9dB ~ 2.2dB @ 150MHz ~ 5.5GHz
Frequency - Transition: 25GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 60mA
Power - Max: 210mW
Gain: 37dB
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH