BFP 420F H6327 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.29 EUR |
| 10+ | 0.79 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |
| 3000+ | 0.3 EUR |
| 6000+ | 0.27 EUR |
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Technische Details BFP 420F H6327 Infineon Technologies
Description: RF TRANSISTOR, X BAND, NPN, Packaging: Bulk, Package / Case: 4-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 37dB, Power - Max: 210mW, Current - Collector (Ic) (Max): 60mA, Voltage - Collector Emitter Breakdown (Max): 4.5V, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V, Frequency - Transition: 25GHz, Noise Figure (dB Typ @ f): 0.9dB ~ 2.2dB @ 150MHz ~ 5.5GHz, Supplier Device Package: 4-TSFP, Part Status: Active.
Weitere Produktangebote BFP 420F H6327
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| BFP420FH6327 | Infineon Technologies |
 Description: RF TRANSISTOR, X BAND, NPNPackaging: Bulk Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 37dB Power - Max: 210mW Current - Collector (Ic) (Max): 60mA Voltage - Collector Emitter Breakdown (Max): 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 0.9dB ~ 2.2dB @ 150MHz ~ 5.5GHz Supplier Device Package: 4-TSFP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BFP420FH6327 |
|
Hersteller: Infineon Technologies
Description: RF TRANSISTOR, X BAND, NPN
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 37dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 60mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 2.2dB @ 150MHz ~ 5.5GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Description: RF TRANSISTOR, X BAND, NPN
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 37dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 60mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 2.2dB @ 150MHz ~ 5.5GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH