BFP 420F H6327 Infineon Technologies
auf Bestellung 593 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.75 EUR |
| 10+ | 0.64 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.3 EUR |
| 3000+ | 0.25 EUR |
| 9000+ | 0.24 EUR |
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Technische Details BFP 420F H6327 Infineon Technologies
Description: RF TRANSISTOR, X BAND, NPN, Packaging: Bulk, Package / Case: 4-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 37dB, Power - Max: 210mW, Current - Collector (Ic) (Max): 60mA, Voltage - Collector Emitter Breakdown (Max): 4.5V, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V, Frequency - Transition: 25GHz, Noise Figure (dB Typ @ f): 0.9dB ~ 2.2dB @ 150MHz ~ 5.5GHz, Supplier Device Package: 4-TSFP, Part Status: Active.
Weitere Produktangebote BFP 420F H6327
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| BFP420FH6327 | Hersteller : Infineon Technologies |
 Description: RF TRANSISTOR, X BAND, NPNPackaging: Bulk Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 37dB Power - Max: 210mW Current - Collector (Ic) (Max): 60mA Voltage - Collector Emitter Breakdown (Max): 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 0.9dB ~ 2.2dB @ 150MHz ~ 5.5GHz Supplier Device Package: 4-TSFP Part Status: Active |
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