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BFP 640FESD E6327 Infineon Technologies


fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.7V 46GHZ 4-TSFP
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 4-TSFP
Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
Frequency - Transition: 46GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Voltage - Collector Emitter Breakdown (Max): 4.7V
Current - Collector (Ic) (Max): 50mA
Power - Max: 200mW
Gain: 8B ~ 30.5dB
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Technische Details BFP 640FESD E6327 Infineon Technologies

Description: RF TRANS NPN 4.7V 46GHZ 4-TSFP, Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 4-SMD, Flat Leads, Packaging: Tape & Reel (TR), Part Status: Obsolete, Supplier Device Package: 4-TSFP, Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz, Frequency - Transition: 46GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V, Voltage - Collector Emitter Breakdown (Max): 4.7V, Current - Collector (Ic) (Max): 50mA, Power - Max: 200mW, Gain: 8B ~ 30.5dB.