BFP 650F E6327 Infineon Technologies
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.5V 42GHZ 4-TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11dB ~ 21.5dB
Power - Max: 500mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Supplier Device Package: 4-TSFP
Part Status: Obsolete
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Technische Details BFP 650F E6327 Infineon Technologies
Description: RF TRANS NPN 4.5V 42GHZ 4-TSFP, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 11dB ~ 21.5dB, Power - Max: 500mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 4.5V, DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V, Frequency - Transition: 42GHz, Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz, Supplier Device Package: 4-TSFP, Part Status: Obsolete.
Weitere Produktangebote BFP 650F E6327
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BFP 650F E6327 | Infineon Technologies |
Description: RF TRANS NPN 4.5V 42GHZ 4-TSFP Part Status: Obsolete Supplier Device Package: 4-TSFP Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz Frequency - Transition: 42GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V Voltage - Collector Emitter Breakdown (Max): 4.5V Current - Collector (Ic) (Max): 150mA Power - Max: 500mW Gain: 11dB ~ 21.5dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BFP 650F E6327 |
|
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.5V 42GHZ 4-TSFP
Part Status: Obsolete
Supplier Device Package: 4-TSFP
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Frequency - Transition: 42GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 150mA
Power - Max: 500mW
Gain: 11dB ~ 21.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: RF TRANS NPN 4.5V 42GHZ 4-TSFP
Part Status: Obsolete
Supplier Device Package: 4-TSFP
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Frequency - Transition: 42GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 150mA
Power - Max: 500mW
Gain: 11dB ~ 21.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH