BFP720ESDH6327 Infineon Technologies
Hersteller: Infineon Technologies
Description: RF TRANSISTOR, X BAND, NPN
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11dB ~ 30.5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 15mA, 3V
Frequency - Transition: 43GHz
Noise Figure (dB Typ @ f): 0.55dB ~ 1.55dB @ 150MHz ~ 10GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
Description: RF TRANSISTOR, X BAND, NPN
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11dB ~ 30.5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 15mA, 3V
Frequency - Transition: 43GHz
Noise Figure (dB Typ @ f): 0.55dB ~ 1.55dB @ 150MHz ~ 10GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Active
auf Bestellung 148726 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1484+ | 0.33 EUR |
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Technische Details BFP720ESDH6327 Infineon Technologies
Description: RF TRANSISTOR, X BAND, NPN, Packaging: Bulk, Package / Case: SC-82A, SOT-343, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 11dB ~ 30.5dB, Power - Max: 100mW, Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 4.7V, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 15mA, 3V, Frequency - Transition: 43GHz, Noise Figure (dB Typ @ f): 0.55dB ~ 1.55dB @ 150MHz ~ 10GHz, Supplier Device Package: PG-SOT343-4-2, Part Status: Active.
Weitere Produktangebote BFP720ESDH6327
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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BFP 720ESD H6327 | Hersteller : Infineon Technologies |
 RF Bipolar Transistors RF BIP TRANSISTORS |
Produkt ist nicht verfügbar |