BFP182WE6327HTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT343-4
Supplier Device Package: PG-SOT343-3D
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 35mA
Power - Max: 250mW
Gain: 22dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
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Technische Details BFP182WE6327HTSA1 Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT343-4, Supplier Device Package: PG-SOT343-3D, Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz, Frequency - Transition: 8GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V, Voltage - Collector Emitter Breakdown (Max): 12V, Current - Collector (Ic) (Max): 35mA, Power - Max: 250mW, Gain: 22dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-82A, SOT-343, Packaging: Tape & Reel (TR).
Weitere Produktangebote BFP182WE6327HTSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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BFP182WE6327HTSA1 | Infineon Technologies |
Description: RF TRANS NPN 12V 8GHZ SOT343-4 Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 22dB Power - Max: 250mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT343-3D |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BFP182WE6327HTSA1 |
|
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Description: RF TRANS NPN 12V 8GHZ SOT343-4
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH