BFP 720F H6327 Infineon Technologies
auf Bestellung 4521 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 0.95 EUR |
| 10+ | 0.76 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.35 EUR |
| 3000+ | 0.29 EUR |
| 9000+ | 0.28 EUR |
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Technische Details BFP 720F H6327 Infineon Technologies
Description: RF TRANSISTOR, X BAND, NPN, Packaging: Bulk, Package / Case: 4-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 15dB, Power - Max: 100mW, Current - Collector (Ic) (Max): 25mA, Voltage - Collector Emitter Breakdown (Max): 4.7V, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V, Frequency - Transition: 45GHz, Noise Figure (dB Typ @ f): 1dB @ 10GHz, Supplier Device Package: 4-TSFP, Part Status: Active.
Weitere Produktangebote BFP 720F H6327
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| BFP720FH6327 | Hersteller : Infineon Technologies |
 Description: RF TRANSISTOR, X BAND, NPNPackaging: Bulk Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 15dB Power - Max: 100mW Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 4.7V DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 1dB @ 10GHz Supplier Device Package: 4-TSFP Part Status: Active |
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