BFP720FH6327 Infineon Technologies

Description: RF TRANSISTOR, X BAND, NPN, Packaging: Bulk, Package / Case: 4-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 15dB, Power - Max: 100mW, Current - Collector (Ic) (Max): 25mA, Voltage - Collector Emitter Breakdown (Max): 4.7V, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V, Frequency - Transition: 45GHz, Noise Figure (dB Typ @ f): 1dB @ 10GHz, Supplier Device Package: 4-TSFP, Part Status: Active.