BFR182E6327 Infineon Technologies
Hersteller: Infineon Technologies
Description: BFR182 - LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 18dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
Produktrezensionen
Produktbewertung abgeben
Technische Details BFR182E6327 Infineon Technologies
Description: BFR182 - LOW-NOISE SI TRANSISTOR, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 12dB ~ 18dB, Power - Max: 250mW, Current - Collector (Ic) (Max): 35mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V, Frequency - Transition: 8GHz, Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz, Supplier Device Package: PG-SOT23, Part Status: Active.
Weitere Produktangebote BFR182E6327 nach Preis ab 0.26 EUR bis 1.72 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BFR 182 E6327 | Infineon Technologies |
RF Bipolar Transistors NPN Silicon RF TRANSISTOR |
auf Bestellung 6962 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BFR 182 E6327 |
|
Hersteller: Infineon Technologies
RF Bipolar Transistors NPN Silicon RF TRANSISTOR
RF Bipolar Transistors NPN Silicon RF TRANSISTOR
auf Bestellung 6962 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.72 EUR |
| 10+ | 1.2 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.34 EUR |
| 3000+ | 0.29 EUR |
| 6000+ | 0.26 EUR |