BFR750L3RHE6327 Infineon Technologies
Hersteller: Infineon Technologies
Description: RF BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 360mW
Current - Collector (Ic) (Max): 90mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V
Frequency - Transition: 37GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-TSLP-3
Part Status: Active
Description: RF BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 360mW
Current - Collector (Ic) (Max): 90mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V
Frequency - Transition: 37GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-TSLP-3
Part Status: Active
auf Bestellung 36420 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
944+ | 0.52 EUR |
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Technische Details BFR750L3RHE6327 Infineon Technologies
Description: RF BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 21dB, Power - Max: 360mW, Current - Collector (Ic) (Max): 90mA, Voltage - Collector Emitter Breakdown (Max): 4.7V, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V, Frequency - Transition: 37GHz, Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz, Supplier Device Package: PG-TSLP-3, Part Status: Active.
Weitere Produktangebote BFR750L3RHE6327 nach Preis ab 6.7 EUR bis 7.44 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||
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BFR750L3RHE6327 | Hersteller : Infineon | Транз. Бипол. ВЧ NPN TSLP-3-9 Uceo=4,7 V; Icmax=90 mA; f=10 GHz; Pdmax=0,36 W: hfe=160/400: Nf=0,6 dB@1,8 GHz |
auf Bestellung 880 Stücke: Lieferzeit 14-21 Tag (e) |
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BFR 750L3RH E6327 | Hersteller : Infineon Technologies | RF Bipolar Transistors NPN Silicn Germanium RF Transistor |
Produkt ist nicht verfügbar |