BFS17WE6327 Infineon Technologies
Hersteller: Infineon Technologies
Description: RF BIPOLAR TRANSISTOR
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 25mA
Power - Max: 280mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Part Status: Active
Supplier Device Package: SOT-323
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Frequency - Transition: 1.4GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
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Technische Details BFS17WE6327 Infineon Technologies
Description: RF BIPOLAR TRANSISTOR, Voltage - Collector Emitter Breakdown (Max): 15V, Current - Collector (Ic) (Max): 25mA, Power - Max: 280mW, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Bulk, Part Status: Active, Supplier Device Package: SOT-323, Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz, Frequency - Transition: 1.4GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V.