BFS481H6327XTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT363-PO
Part Status: Active
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Technische Details BFS481H6327XTSA1 Infineon Technologies
Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6, Packaging: Tape & Reel (TR), Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 150°C (TJ), Gain: 20dB, Power - Max: 175mW, Current - Collector (Ic) (Max): 20mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V, Frequency - Transition: 8GHz, Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz, Supplier Device Package: PG-SOT363-PO, Part Status: Active.
Weitere Produktangebote BFS481H6327XTSA1 nach Preis ab 0.48 EUR bis 1.02 EUR
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BFS481H6327XTSA1 | Infineon Technologies |
Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6 Packaging: Cut Tape (CT) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Gain: 20dB Power - Max: 175mW Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT363-PO Part Status: Active |
auf Bestellung 6381 Stücke: Lieferzeit 10-14 Tag (e) |
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| BFS481H6327XTSA1 | Infineon Technologies |
Транзистор NPN, Uceo, В = 12, Ic = 20 мА, ft, МГц = 8 000, hFE = 70, Icutoff-max = 100 нА, Р, Вт = 0,175, Тексп, °C = -55...+150,... Транзистори Корпус: SOT-363 Очікується: 250 Од. вим: шт Anzahl je Verpackung: 3000 Stücke |
verfügbar 62 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| BFS481H6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT363-PO
Part Status: Active
Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT363-PO
Part Status: Active
auf Bestellung 6381 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 1.02 EUR |
| 25+ | 0.73 EUR |
| 28+ | 0.65 EUR |
| 100+ | 0.56 EUR |
| 250+ | 0.53 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.48 EUR |
| BFS481H6327XTSA1 |
|
Hersteller: Infineon Technologies
Транзистор NPN, Uceo, В = 12, Ic = 20 мА, ft, МГц = 8 000, hFE = 70, Icutoff-max = 100 нА, Р, Вт = 0,175, Тексп, °C = -55...+150,... Транзистори Корпус: SOT-363 Очікується: 250 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
Транзистор NPN, Uceo, В = 12, Ic = 20 мА, ft, МГц = 8 000, hFE = 70, Icutoff-max = 100 нА, Р, Вт = 0,175, Тексп, °C = -55...+150,... Транзистори Корпус: SOT-363 Очікується: 250 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 62 Stücke: