BFS483H6327XTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT363-PO
Part Status: Active
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Technische Details BFS483H6327XTSA1 Infineon Technologies
Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6, Packaging: Tape & Reel (TR), Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 150°C (TJ), Gain: 19dB, Power - Max: 450mW, Current - Collector (Ic) (Max): 65mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V, Frequency - Transition: 8GHz, Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz, Supplier Device Package: PG-SOT363-PO, Part Status: Active.
Weitere Produktangebote BFS483H6327XTSA1 nach Preis ab 0.37 EUR bis 0.86 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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BFS483H6327XTSA1 | Infineon Technologies |
RF Bipolar Transistors RF BIP TRANSISTOR |
auf Bestellung 4665 Stücke: Lieferzeit 10-14 Tag (e) |
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BFS483H6327XTSA1 | Infineon Technologies |
Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6Part Status: Active Supplier Device Package: PG-SOT363-PO Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Frequency - Transition: 8GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Voltage - Collector Emitter Breakdown (Max): 12V Current - Collector (Ic) (Max): 65mA Power - Max: 450mW Gain: 19dB Operating Temperature: 150°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
auf Bestellung 8175 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BFS483H6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
RF Bipolar Transistors RF BIP TRANSISTOR
RF Bipolar Transistors RF BIP TRANSISTOR
auf Bestellung 4665 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.86 EUR |
| 10+ | 0.54 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.4 EUR |
| 3000+ | 0.38 EUR |
| 6000+ | 0.37 EUR |
| BFS483H6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6
Part Status: Active
Supplier Device Package: PG-SOT363-PO
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 65mA
Power - Max: 450mW
Gain: 19dB
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6
Part Status: Active
Supplier Device Package: PG-SOT363-PO
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 65mA
Power - Max: 450mW
Gain: 19dB
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 8175 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 30+ | 0.6 EUR |
| 33+ | 0.54 EUR |
| 100+ | 0.47 EUR |
| 250+ | 0.44 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.4 EUR |


