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BG3123E6327HTSA1 Infineon Technologies


BG 3123.pdf
Hersteller: Infineon Technologies
Description: RF MOSFET 5V SOT363
Current - Test: 14 mA
Voltage - Test: 5 V
Voltage - Rated: 8 V
Supplier Device Package: PG-SOT363-PO
Noise Figure: 1.8dB
Technology: MOSFET
Gain: 25dB
Configuration: 2 N-Channel (Dual)
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 25mA, 20mA
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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Technische Details BG3123E6327HTSA1 Infineon Technologies

Description: RF MOSFET 5V SOT363, Current - Test: 14 mA, Voltage - Test: 5 V, Voltage - Rated: 8 V, Supplier Device Package: PG-SOT363-PO, Noise Figure: 1.8dB, Technology: MOSFET, Gain: 25dB, Configuration: 2 N-Channel (Dual), Frequency: 800MHz, Mounting Type: Surface Mount, Current Rating (Amps): 25mA, 20mA, Package / Case: 6-VSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).