Produkte > INFINEON TECHNOLOGIES > BG5120KE6327HTSA1

BG5120KE6327HTSA1 Infineon Technologies


BG%205120K.pdf
Hersteller: Infineon Technologies
Description: RF MOSFET 5V SOT363
Current - Test: 10 mA
Voltage - Test: 5 V
Voltage - Rated: 8 V
Supplier Device Package: PG-SOT363-PO
Gain: 23dB
Configuration: 2 N-Channel (Dual)
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 20mA
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Noise Figure: 1.1dB
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BG5120KE6327HTSA1 Infineon Technologies

Description: RF MOSFET 5V SOT363, Current - Test: 10 mA, Voltage - Test: 5 V, Voltage - Rated: 8 V, Supplier Device Package: PG-SOT363-PO, Gain: 23dB, Configuration: 2 N-Channel (Dual), Frequency: 800MHz, Mounting Type: Surface Mount, Current Rating (Amps): 20mA, Package / Case: 6-VSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Noise Figure: 1.1dB, Technology: MOSFET (Metal Oxide).