BGH40N120HF BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
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Technische Details BGH40N120HF BASiC SEMICONDUCTOR
Category: THT IGBT transistors, Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3, Type of transistor: IGBT, Technology: Field Stop; SiC SBD; Trench, Case: TO247-3, Mounting: THT, Kind of package: tube, Gate-emitter voltage: ±20V, Collector current: 40A, Features of semiconductor devices: integrated anti-parallel diode, Collector-emitter voltage: 1.2kV, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BGH40N120HF
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BGH40N120HF | Hersteller : BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Features of semiconductor devices: integrated anti-parallel diode Collector-emitter voltage: 1.2kV |
Produkt ist nicht verfügbar |