BGH40N120HF BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 40A
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details BGH40N120HF BASiC SEMICONDUCTOR
Category: THT IGBT transistors, Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3, Type of transistor: IGBT, Case: TO247-3, Mounting: THT, Kind of package: tube, Technology: Field Stop; SiC SBD; Trench, Collector-emitter voltage: 1.2kV, Gate-emitter voltage: ±20V, Collector current: 40A, Features of semiconductor devices: integrated anti-parallel diode, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BGH40N120HF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
BGH40N120HF | Hersteller : BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 40A; TO247-3 Type of transistor: IGBT Case: TO247-3 Mounting: THT Kind of package: tube Technology: Field Stop; SiC SBD; Trench Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 40A Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |