BGH50N65HF1

BGH50N65HF1 BASiC SEMICONDUCTOR


pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF81454BB1CA00D4&compId=BGH50N65HF1.pdf?ci_sign=0edd13eeed748c5d6425cc7ccdc2829605f857f7 Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+15.76 EUR
7+10.31 EUR
600+10.15 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BGH50N65HF1 BASiC SEMICONDUCTOR

Category: THT IGBT transistors, Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 50A, Power dissipation: 357W, Case: TO247-3, Gate-emitter voltage: ±20V, Pulsed collector current: 200A, Mounting: THT, Gate charge: 308nC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Technology: Field Stop; SiC SBD; Trench, Turn-on time: 54ns, Turn-off time: 256ns, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote BGH50N65HF1 nach Preis ab 10.31 EUR bis 15.76 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
BGH50N65HF1 BGH50N65HF1 Hersteller : BASiC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF81454BB1CA00D4&compId=BGH50N65HF1.pdf?ci_sign=0edd13eeed748c5d6425cc7ccdc2829605f857f7 Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Field Stop; SiC SBD; Trench
Turn-on time: 54ns
Turn-off time: 256ns
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.76 EUR
7+10.31 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH