BGH50N65HS1 BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 308nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 16.16 EUR |
| 7+ | 11.01 EUR |
| 150+ | 10.75 EUR |
| 600+ | 10.58 EUR |
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Technische Details BGH50N65HS1 BASiC SEMICONDUCTOR
Category: THT IGBT transistors, Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3, Type of transistor: IGBT, Technology: Field Stop; SiC SBD; Trench, Collector-emitter voltage: 650V, Collector current: 50A, Power dissipation: 357W, Case: TO247-3, Gate-emitter voltage: ±20V, Pulsed collector current: 200A, Mounting: THT, Gate charge: 308nC, Kind of package: tube, Turn-on time: 54ns, Turn-off time: 256ns, Features of semiconductor devices: integrated anti-parallel diode, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BGH50N65HS1 nach Preis ab 11.01 EUR bis 16.16 EUR
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BGH50N65HS1 | Hersteller : BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 357W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 308nC Kind of package: tube Turn-on time: 54ns Turn-off time: 256ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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