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BGH50N65HS1

BGH50N65HS1 BASiC SEMICONDUCTOR

BGH50N65HS1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 357W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 54ns
Turn-off time: 256ns
Gate charge: 308nC
Features of semiconductor devices: integrated anti-parallel diode
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Technische Details BGH50N65HS1 BASiC SEMICONDUCTOR

Category: THT IGBT transistors, Description: Transistor: IGBT; SiC SBD; 650V; 50A; 357W; TO247-3, Type of transistor: IGBT, Technology: Field Stop; SiC SBD; Trench, Collector-emitter voltage: 650V, Collector current: 50A, Power dissipation: 357W, Case: TO247-3, Gate-emitter voltage: ±20V, Mounting: THT, Kind of package: tube, Pulsed collector current: 200A, Turn-on time: 54ns, Turn-off time: 256ns, Gate charge: 308nC, Features of semiconductor devices: integrated anti-parallel diode.