BGH75N65HF1 BASiC SEMICONDUCTOR
Hersteller: BASiC SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Power dissipation: 405W
Case: TO247-3
Mounting: THT
Gate charge: 444nC
Kind of package: tube
Turn-off time: 376ns
Turn-on time: 104ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
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Technische Details BGH75N65HF1 BASiC SEMICONDUCTOR
Category: THT IGBT transistors, Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3, Type of transistor: IGBT, Technology: Field Stop; SiC SBD; Trench, Power dissipation: 405W, Case: TO247-3, Mounting: THT, Gate charge: 444nC, Kind of package: tube, Turn-off time: 376ns, Turn-on time: 104ns, Features of semiconductor devices: integrated anti-parallel diode, Collector current: 75A, Gate-emitter voltage: ±20V, Pulsed collector current: 300A, Collector-emitter voltage: 650V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote BGH75N65HF1
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BGH75N65HF1 | Hersteller : BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Power dissipation: 405W Case: TO247-3 Mounting: THT Gate charge: 444nC Kind of package: tube Turn-off time: 376ns Turn-on time: 104ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 300A Collector-emitter voltage: 650V |
Produkt ist nicht verfügbar |