BGH75N65HF1 BASiC SEMICONDUCTOR

Category: THT IGBT transistors, Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3, Type of transistor: IGBT, Technology: Field Stop; SiC SBD; Trench, Case: TO247-3, Mounting: THT, Kind of package: tube, Gate charge: 444nC, Turn-on time: 104ns, Turn-off time: 376ns, Power dissipation: 405W, Collector current: 75A, Gate-emitter voltage: ±20V, Pulsed collector current: 300A, Collector-emitter voltage: 650V, Features of semiconductor devices: integrated anti-parallel diode, Anzahl je Verpackung: 1 Stücke.