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BGH75N65HF1

BGH75N65HF1 BASiC SEMICONDUCTOR

BGH75N65HF1.pdf
Hersteller: BASiC SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 104ns
Turn-off time: 376ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Power dissipation: 405W
Gate charge: 444nC
Features of semiconductor devices: integrated anti-parallel diode
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Technische Details BGH75N65HF1 BASiC SEMICONDUCTOR

Category: THT IGBT transistors, Description: Transistor: IGBT; SiC SBD; 650V; 75A; 405W; TO247-3, Type of transistor: IGBT, Technology: Field Stop; SiC SBD; Trench, Case: TO247-3, Mounting: THT, Kind of package: tube, Pulsed collector current: 300A, Turn-on time: 104ns, Turn-off time: 376ns, Gate-emitter voltage: ±20V, Collector current: 75A, Collector-emitter voltage: 650V, Power dissipation: 405W, Gate charge: 444nC, Features of semiconductor devices: integrated anti-parallel diode.