BIDW75N65EH5 Bourns Inc.
Hersteller: Bourns Inc.Description: IGBT TRENCH FS 650V 150A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/186ns
Switching Energy: 2.39mJ (on), .90mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 186 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 394 W
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 15 EUR |
| 30+ | 11.98 EUR |
| 120+ | 10.72 EUR |
| 510+ | 9.46 EUR |
| 1020+ | 8.51 EUR |
| 2010+ | 7.98 EUR |
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Technische Details BIDW75N65EH5 Bourns Inc.
Description: IGBT TRENCH FS 650V 150A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 120 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A, Supplier Device Package: TO-247, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 39ns/186ns, Switching Energy: 2.39mJ (on), .90mJ (off), Test Condition: 400V, 75A, 10Ohm, 15V, Gate Charge: 186 nC, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 394 W.
Weitere Produktangebote BIDW75N65EH5 nach Preis ab 8.55 EUR bis 15.11 EUR
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BIDW75N65EH5 | Hersteller : Bourns |
IGBT Transistors IGBT Discrete 650V, 75A, High speed switching in TO-247-3L |
auf Bestellung 2982 Stücke: Lieferzeit 14-28 Tag (e) |
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