BLD6G21L-50,112 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF MOSFET LDMOS 28V CDFM4
Packaging: Tray
Package / Case: SOT-1130A
Current Rating (Amps): 10.2A
Mounting Type: Chassis Mount
Frequency: 2.02GHz
Configuration: Dual, Common Source
Power - Output: 8W
Gain: 14.5dB
Technology: LDMOS
Supplier Device Package: CDFM4
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 170 mA
Description: RF MOSFET LDMOS 28V CDFM4
Packaging: Tray
Package / Case: SOT-1130A
Current Rating (Amps): 10.2A
Mounting Type: Chassis Mount
Frequency: 2.02GHz
Configuration: Dual, Common Source
Power - Output: 8W
Gain: 14.5dB
Technology: LDMOS
Supplier Device Package: CDFM4
Part Status: Obsolete
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 170 mA
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 221.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BLD6G21L-50,112 NXP USA Inc.
Description: RF MOSFET LDMOS 28V CDFM4, Packaging: Tray, Package / Case: SOT-1130A, Current Rating (Amps): 10.2A, Mounting Type: Chassis Mount, Frequency: 2.02GHz, Configuration: Dual, Common Source, Power - Output: 8W, Gain: 14.5dB, Technology: LDMOS, Supplier Device Package: CDFM4, Part Status: Obsolete, Voltage - Rated: 65 V, Voltage - Test: 28 V, Current - Test: 170 mA.
Weitere Produktangebote BLD6G21L-50,112
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
BLD6G21L-50,112 | Hersteller : NXP |
Description: NXP - BLD6G21L-50,112 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |