BMS3004-1E ON Semiconductor
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Technische Details BMS3004-1E ON Semiconductor
Description: MOSFET P-CH 75V 68A TO220F-3SG, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 68A (Ta), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 34A, 10V, Power Dissipation (Max): 2W (Ta), 40W (Tc), Supplier Device Package: TO-220F-3SG, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 20 V.
Weitere Produktangebote BMS3004-1E
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BMS3004-1E | Hersteller : ON Semiconductor |
 Trans MOSFET P-CH Si 75V 68A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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BMS3004-1E | Hersteller : onsemi |
Description: MOSFET P-CH 75V 68A TO220F-3SG Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Ta) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 34A, 10V Power Dissipation (Max): 2W (Ta), 40W (Tc) Supplier Device Package: TO-220F-3SG Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 20 V |
Produkt ist nicht verfügbar |