BP 104 SR OSRAM Opto Semiconductors
Hersteller: OSRAM Opto SemiconductorsPhotodiode PIN Chip 850nm 0.62A/W Sensitivity 2-Pin SMT DIL SMT
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Technische Details BP 104 SR OSRAM Opto Semiconductors
Category: Photodiodes, Description: PIN IR photodiode; DIL; SMD; 850nm; 400÷1100nm; 60°; 2nA; 150mW, Type of photoelement: PIN IR photodiode, Case: DIL, Mounting: SMD, Wavelength of peak sensitivity: 850nm, Wavelength: 400...1100nm, Viewing angle: 60°, Active area: 4.84mm2, Turn-on time: 20ns, Max. off-state voltage: 20V, Dark current: 2nA, Turn-off time: 20ns, Radiant power: 150mW, LED lens: transparent, LED version: reverse mount, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote BP 104 SR
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BP 104 SR | Hersteller : OSRAM Opto Semiconductors |
Photodiode PIN Chip 850nm 0.62A/W Sensitivity 2-Pin SMT DIL SMT |
Produkt ist nicht verfügbar |
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| BP 104 SR | Hersteller : ams OSRAM |
Category: Photodiodes Description: PIN IR photodiode; DIL; SMD; 850nm; 400÷1100nm; 60°; 2nA; 150mW Type of photoelement: PIN IR photodiode Case: DIL Mounting: SMD Wavelength of peak sensitivity: 850nm Wavelength: 400...1100nm Viewing angle: 60° Active area: 4.84mm2 Turn-on time: 20ns Max. off-state voltage: 20V Dark current: 2nA Turn-off time: 20ns Radiant power: 150mW LED lens: transparent LED version: reverse mount Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| BP 104 SR | Hersteller : ams OSRAM |
Category: Photodiodes Description: PIN IR photodiode; DIL; SMD; 850nm; 400÷1100nm; 60°; 2nA; 150mW Type of photoelement: PIN IR photodiode Case: DIL Mounting: SMD Wavelength of peak sensitivity: 850nm Wavelength: 400...1100nm Viewing angle: 60° Active area: 4.84mm2 Turn-on time: 20ns Max. off-state voltage: 20V Dark current: 2nA Turn-off time: 20ns Radiant power: 150mW LED lens: transparent LED version: reverse mount |
Produkt ist nicht verfügbar |