
BP 104 SR OSRAM Opto Semiconductors

Photodiode PIN Chip 850nm 0.62A/W Sensitivity 2-Pin SMT DIL SMT
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details BP 104 SR OSRAM Opto Semiconductors
Category: Photodiodes, Description: PIN IR photodiode; DIL; SMD; 850nm; 400÷1100nm; 60°; 2nA; 150mW, Type of photoelement: PIN IR photodiode, Case: DIL, Mounting: SMD, Wavelength of peak sensitivity: 850nm, Wavelength: 400...1100nm, Viewing angle: 60°, Active area: 4.84mm2, Turn-on time: 20ns, Max. off-state voltage: 20V, Dark current: 2nA, Turn-off time: 20ns, Radiant power: 150mW, LED lens: transparent, LED version: reverse mount, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote BP 104 SR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
![]() |
BP 104 SR | Hersteller : OSRAM Opto Semiconductors |
![]() |
Produkt ist nicht verfügbar |
|
BP 104 SR | Hersteller : ams OSRAM |
![]() Description: PIN IR photodiode; DIL; SMD; 850nm; 400÷1100nm; 60°; 2nA; 150mW Type of photoelement: PIN IR photodiode Case: DIL Mounting: SMD Wavelength of peak sensitivity: 850nm Wavelength: 400...1100nm Viewing angle: 60° Active area: 4.84mm2 Turn-on time: 20ns Max. off-state voltage: 20V Dark current: 2nA Turn-off time: 20ns Radiant power: 150mW LED lens: transparent LED version: reverse mount Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||
BP 104 SR | Hersteller : ams OSRAM |
![]() Description: PIN IR photodiode; DIL; SMD; 850nm; 400÷1100nm; 60°; 2nA; 150mW Type of photoelement: PIN IR photodiode Case: DIL Mounting: SMD Wavelength of peak sensitivity: 850nm Wavelength: 400...1100nm Viewing angle: 60° Active area: 4.84mm2 Turn-on time: 20ns Max. off-state voltage: 20V Dark current: 2nA Turn-off time: 20ns Radiant power: 150mW LED lens: transparent LED version: reverse mount |
Produkt ist nicht verfügbar |