Technische Details BQ4011LYMA-70N TI
Description: IC NVSRAM 256KBIT PARALLEL 28DIP, Packaging: Tube, Package / Case: 28-DIP Module (0.61", 15.49mm), Mounting Type: Through Hole, Memory Size: 256Kbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3V ~ 3.6V, Technology: NVSRAM (Non-Volatile SRAM), Memory Format: NVSRAM, Supplier Device Package: 28-DIP Module (18.42x37.72), Write Cycle Time - Word, Page: 70ns, Memory Interface: Parallel, Access Time: 70 ns, Memory Organization: 32K x 8, DigiKey Programmable: Not Verified.
Weitere Produktangebote BQ4011LYMA-70N
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BQ4011LYMA-70N | Hersteller : Texas Instruments |
 Description: IC NVSRAM 256KBIT PARALLEL 28DIPPackaging: Tube Package / Case: 28-DIP Module (0.61", 15.49mm) Mounting Type: Through Hole Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 28-DIP Module (18.42x37.72) Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
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