Technische Details BQ4011MA-100 TI
Description: IC NVSRAM 256KBIT PARALLEL 28DIP, Packaging: Tube, Package / Case: 28-DIP Module (0.61", 15.49mm), Mounting Type: Through Hole, Memory Size: 256Kbit, Memory Type: Non-Volatile, Operating Temperature: 0°C ~ 70°C (TA), Voltage - Supply: 4.75V ~ 5.5V, Technology: NVSRAM (Non-Volatile SRAM), Memory Format: NVSRAM, Supplier Device Package: 28-DIP Module (18.42x37.72), Part Status: Obsolete, Write Cycle Time - Word, Page: 100ns, Memory Interface: Parallel, Access Time: 100 ns, Memory Organization: 32K x 8.
Weitere Produktangebote BQ4011MA-100
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| BQ4011MA-100 | Hersteller : TI |
 08+; |
auf Bestellung 205200 Stücke: Lieferzeit 21-28 Tag (e) |
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| BQ4011MA-100 | Hersteller : Texas Instruments |
NVRAM NVSRAM Parallel 256Kbit 5V 28-Pin DIP Module |
Produkt ist nicht verfügbar |
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BQ4011MA-100 | Hersteller : Texas Instruments |
Description: IC NVSRAM 256KBIT PARALLEL 28DIP Packaging: Tube Package / Case: 28-DIP Module (0.61", 15.49mm) Mounting Type: Through Hole Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.75V ~ 5.5V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 28-DIP Module (18.42x37.72) Part Status: Obsolete Write Cycle Time - Word, Page: 100ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 32K x 8 |
Produkt ist nicht verfügbar |