BS107ARL1G ON Semiconductor
Hersteller: ON SemiconductorN-канальний ПТ; Udss, В = 200; Id = 250 мА; Ciss, пФ @ Uds, В = 60 @ 25; Rds = 6,4 Ом @ 250 мA, 10 В; Ugs(th) = 3 В @ 1 мА; Р, Вт = 0,35 Вт; Тексп, °C = -55...+150; Тип монт. = вивідний; TO-92-3
auf Bestellung 542 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 2.73 EUR |
| 10+ | 2.35 EUR |
| 100+ | 2.07 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BS107ARL1G ON Semiconductor
Description: MOSFET N-CH 200V 250MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 6.4Ohm @ 250mA, 10V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TO-92 (TO-226), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V.
Weitere Produktangebote BS107ARL1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
BS107ARL1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 0.25A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
|
 |
BS107ARL1G | Hersteller : onsemi |
Description: MOSFET N-CH 200V 250MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 6.4Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
Produkt ist nicht verfügbar |
|
|
|
BS107ARL1G | Hersteller : onsemi |
Description: MOSFET N-CH 200V 250MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 6.4Ohm @ 250mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V |
Produkt ist nicht verfügbar |