Technische Details BS170FTA
- MOSFET, N SOT-23 REEL 3K
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:60V
- Cont Current Id:0.15A
- On State Resistance:5ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:3V
- Case Style:SOT-23
- Termination Type:SMD
- Current Temperature:25`C
- External Depth:2.5mm
- External Length / Height:1.12mm
- External Width:3.05mm
- Full Power Rating Temperature:25`C
- Max Power Dissipation Ptot:0.33W
- Max Voltage Vds:60V
- Max Voltage Vgs th:3V
- No. of Pins:3
- No. of Transistors:1
- Power Dissipation:0.33W
- Power Dissipation Pd:0.33W
- Pulse Current Idm:3A
- Reel Quantity:3000
- SMD Marking:MV
- Tape Width:8mm
- Transistor Case Style:SOT-23
Weitere Produktangebote BS170FTA nach Preis ab 0.17 EUR bis 0.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BS170FTA | Hersteller : EVVO |
 Description: MOSFET N-CH 60V 0.15MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 200mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V |
auf Bestellung 338 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
BS170FTA | Hersteller : DIODES/ZETEX |
N-MOSFET 150mA 60V 330mW 5Ω BS170FTA smd TBS170sot23 Anzahl je Verpackung: 100 Stücke |
auf Bestellung 465 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||
 |
BS170FTA | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 0.15A 3-Pin SOT-23 T/R |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||
|
|
BS170FTA | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 0.15A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
|||||||||
| BS170FTA | Hersteller : Diodes Inc./Zetex |
MOSFET N-CH 60V 150MA SOT-23 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
||||||||||
 |
BS170FTA | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 0.15MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150µA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Power Dissipation (Max): 330mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V |
Produkt ist nicht verfügbar |
|||||||||
|
|
BS170FTA | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 0.15MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150µA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Power Dissipation (Max): 330mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V |
Produkt ist nicht verfügbar |
|||||||||
 |
BS170FTA | Hersteller : UMW |
Description: MOSFET N-CH 60V 0.15MA SOT23 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
|||||||||
|
|
BS170FTA | Hersteller : UMW |
Description: MOSFET N-CH 60V 0.15MA SOT23 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
|||||||||
|
|
BS170FTA | Hersteller : EVVO |
Description: MOSFET N-CH 60V 0.15MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 200mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||||||
 |
BS170FTA | Hersteller : Diodes Incorporated |
MOSFETs N-Chnl 60V |
Produkt ist nicht verfügbar |
|||||||||
 |
BS170FTA | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.15mA; 0.33W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.15mA Power dissipation: 0.33W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |