Technische Details BS250KLTR1E3 Vishay
Description: MOSFET P-CH 60V 270MA TO92-18RM, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 270mA (Ta), Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-92-18RM, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 15 V.
Weitere Produktangebote BS250KLTR1E3
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| BS250KL-TR1-E3 |
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auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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BS250KL-TR1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH Si 60V 0.27A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
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BS250KL-TR1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 270MA TO92-18RM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-92-18RM Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 15 V |
Produkt ist nicht verfügbar |
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BS250KL-TR1-E3 | Hersteller : Vishay / Siliconix |
MOSFET 60V 0.27A 0.8W |
Produkt ist nicht verfügbar |