BS7067N06LS3G Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 14A/20A 8TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Power Dissipation (Max): 2.1W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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Technische Details BS7067N06LS3G Infineon Technologies
Description: MOSFET N-CH 60V 14A/20A 8TSDSON, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PG-TSDSON-8, Vgs(th) (Max) @ Id: 2.2V @ 35µA, Power Dissipation (Max): 2.1W (Ta), 78W (Tc), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.